| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a solid-state imaging device that allows improving light-receiving sensitivity, and to provide a method of manufacturing the solid-state imaging device.SOLUTION: There is provided a solid-state imaging device. The solid-state imaging device includes a semiconductor layer, a reflective plate, and an element isolation region. The semiconductor layer has a plurality of photoelectric conversion elements arranged in a two-dimentional array shape. The reflective plate covers the surface of the semiconductor layer opposite to the surface in which light is incident, and reflects the light. The element isolation region is provided to a depth from the surface of the semiconductor layer in which light is incident to the reflective plate so as to partition the semiconductor layer per photoelectric conversion element, electrically isolates the photoelectric conversion elements from each other, and has a light-reflective surface.</p> |
