| 发明名称 |
CHEMICAL VAPOR DEPOSITION APPARATUS |
| 摘要 |
A chemical vapor deposition apparatus and a method for forming a parylene film are provided. The chemical vapor deposition apparatus includes a buffer chamber, a deposition chamber, a pyrolysis chamber, an evaporator, and a sorter. The buffer chamber has a first valve, a second valve, and a carrying apparatus. The evaporator is connected with the second valve. The pyrolysis chamber is connected with the evaporator through a first pipe, wherein the first pipe has a third valve. The deposition chamber is connected with the pyrolysis chamber. The sorter is connected with the buffer chamber through the first valve. |
| 申请公布号 |
US2015034011(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414515535 |
申请日期 |
2014.10.16 |
| 申请人 |
Industrial Technology Research Institute |
发明人 |
Chang Chun-Hao;Chuang Chuan-Sheng |
| 分类号 |
C23C16/54;C23C16/455;C23C16/448;B05D1/00;C23C16/452 |
主分类号 |
C23C16/54 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical vapor deposition apparatus, comprising:
a buffer chamber, having a first valve, a second valve, and a carrying apparatus; an evaporator, connected with the second valve; a pyrolysis chamber, connected with the evaporator through a first pipe, wherein the first pipe has a third valve; a deposition chamber, connected with the pyrolysis chamber; and a sorter connected with the buffer chamber through the first valve. |
| 地址 |
Hsinchu TW |
