| 摘要 |
The present invention provides a solid-state image sensor (100) in which degradation in image quality can be reduced. The solid-state image sensor includes an optical isolation layer (110) between a pupil dividing unit (101) and a plurality of photoelectric conversion units (121, 122). The optical isolation layer includes a plurality of high-refractive-index areas (111, 112) and a low-refractive-index area (113) having a lower refractive index than that of the high- refractive-index areas. The high-refractive-index areas are disposed above the photoelectric conversion units, and the low-refractive- index area is disposed between the high-refractive-index areas. The refractive index changes stepwise at the boundaries between the high-refractive-index areas and the low-refractive-index area. The refractive index difference of the stepwise changing portion is 0.15 or more. A value obtained by multiplying the physical thickness of the optical isolation layer by the refractive index of the high-refractive- index areas is 2.0 or less times as large as the wavelength of incident light. |
