| 摘要 |
This photoelectric conversion device is provided with: an electrode layer; a first semiconductor layer arranged on the electrode layer, and in which a plurality of crystal grains including at least In and/or Ga, as well as Cu, S, and Se, are bonded; and a second semiconductor layer joined onto the first semiconductor layer, and including CdS or In2S3. In first crystal grains which, of the crystal grains of the first semiconductor layer, are those joined to the second semiconductor layer, the proportion of the concentration of S to the total concentration of S and Se is lower in the surface portion than in the center portion. |
