发明名称 |
PROCESS FOR PRODUCING A P-N JUNCTION IN A CZTS-BASED PHOTOVOLTAIC CELL AND CZTS-BASED SUPERSTRATE PHOTOVOLTAIC CELL |
摘要 |
The invention relates to a process for producing a p-n junction in a photovoltaic cell made of thin CZTS-based films, comprising: a) a step of depositing a film of precursors containing zinc, tin and copper, the amount of zinc being larger than that required to convert the precursors into a CZTS type photovoltaic material and b) a step of annealing the precursors, under a sulphur- and/or selenium-containing atmosphere, so as to obtain a photovoltaic film made of CZTS and a buffer layer made of ZnS1-xSex, where x is comprised between 0 and 1. |
申请公布号 |
WO2015015367(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
WO2014IB63305 |
申请日期 |
2014.07.22 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
GRENET, LOUIS;ALTAMURA, GIOVANNI;KOHEN, DAVID;FILLON, RAPHAËL;PERRAUD, SIMON |
分类号 |
H01L31/032;H01L21/02;H01L31/072 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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