| 摘要 |
<p>An insulated gate bipolar translator (IGBT) manufacturing method comprises: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface; forming a field-stop layer of a first conducting type on the second major surface of the semiconductor substrate; selectively forming a base region of a second conducting type on the first major surface of the semiconductor substrate; further forming a first major surface structure of an IGBT on the first major surface, on which the base region is formed, of the semiconductor substrate; and further forming the rest part, namely, a second major surface structure of the IGBT on the second major surface, on which the field-stop layer is formed, of the semiconductor substrate. With the method, an IGBT with a high breakdown voltage, low leakage of electricity, a drop-voltage positive temperature coefficient, a low switching loss, a simple process, and high product reliability can be manufactured.</p> |
