| 摘要 |
PROBLEM TO BE SOLVED: To improve in-plane uniformity of a crystallized state in a crystallized film obtained by crystallizing a film containing metal and CH.SOLUTION: In a crystallization method, a film containing metal and CH, where a and b express natural numbers, is subjected to heat treatment in a pressurized oxygen atmosphere so that the film is oxidized to be crystallized. In the crystallization method, when the heat treatment is performed, pressurized oxygen gas or mixture gas of oxygen gas and inert gas are introduced on the film, and, when an atmosphere on the film reaches a first pressure, pressure in the atmosphere on the film is reduced to remove HO 53 or CO52 from on the film, while, when an atmosphere on the film reaches a second pressure, pressure in the atmosphere on the film is increased. |
