| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask structure of double exposure, and a method for exposure development.SOLUTION: In the mask structure of double exposure and the method of exposure development, exposure development is performed to a base material 10, the base material 10 has a central region 11 and a marginal region 12, and the mask structure includes a plurality of first masks 20 separated in a mutually parallel state and also corresponding to the central region 11; a plurality of second masks 30 separated in a mutually parallel state and also corresponding to the central region 11; and a plurality of auxiliary masks 50. These second masks 30 are crossed respectively with the first masks 20, respectively and further form a plurality of superimposed regions 60. These auxiliary masks 50 are non-contact each other, and also assist the superimposed regions 60 corresponding to the surfaces of the second masks 30 in such a manner that these superimposed regions 60 adjacent to the auxiliary masks 50 have sufficient focal depth, and exposure development is performed. In this way, utilizing these auxiliary masks 50, the superimposed regions 60 adjacent to the marginal regions 12 of the central region 11 have satisfactory exposure development effect. |
