发明名称 INTEGRATED CIRCUIT DEVICE
摘要 An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound.
申请公布号 US2015035114(A1) 申请公布日期 2015.02.05
申请号 US201414341956 申请日期 2014.07.28
申请人 NAPRA CO., LTD. 发明人 Sekine Shigenobu;Sekine Yurina
分类号 H01L27/04 主分类号 H01L27/04
代理机构 代理人
主权项 1. An integrated circuit device comprising a semiconductor substrate, an active element and a passive element, the active element being made of the semiconductor substrate, the passive element including a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and being electrically connected to the active element, the functional element having a Si—O bond region obtained by reacting Si particles with an organic Si compound.
地址 Tokyo JP