发明名称 |
INTEGRATED CIRCUIT DEVICE |
摘要 |
An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound. |
申请公布号 |
US2015035114(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201414341956 |
申请日期 |
2014.07.28 |
申请人 |
NAPRA CO., LTD. |
发明人 |
Sekine Shigenobu;Sekine Yurina |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit device comprising a semiconductor substrate, an active element and a passive element,
the active element being made of the semiconductor substrate, the passive element including a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and being electrically connected to the active element, the functional element having a Si—O bond region obtained by reacting Si particles with an organic Si compound. |
地址 |
Tokyo JP |