SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode.

主权项

1. A semiconductor device, comprising:
a first electrode; a second electrode; multiple first conductivity-type first semiconductor regions that are positioned between the first electrode and the second electrode, are in contact with the first electrode, and are arranged along a first direction intersecting a second direction that extends from the first electrode toward the second electrode; a first conductivity-type second semiconductor region that is in contact with the first electrode, disposed around the multiple first conductivity-type first semiconductor regions, and has a dopant concentration that is higher than a dopant concentration of the multiple first conductivity-type first semiconductor regions; and a second conductivity-type first semiconductor layer having portions that are between the multiple first conductivity-type first semiconductor regions and the first conductivity-type second semiconductor region and in Schottky contact with the first electrode.