SEMICONDUCTOR DEVICE STRUCTURES INCLUDING ENERGY BARRIERS, AND RELATED METHODS

摘要

A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.

主权项

1. A method for increasing charge duration within a channel of a transistor, comprising:
forming an energy barrier consisting essentially of carbonated silicon on a surface of a base substrate; forming a source region, a drain region, and a silicon channel of a transistor on the energy barrier; and applying a charge to the channel.