发明名称 THIN FILM TRANSISTOR CIRCUIT AND DISPLAY DEVICE USING IT
摘要 If the threshold of a thin film transistor is depleted, a leak-induced voltage drop takes place and the desired voltage cannot be obtained. Depending on the severity of the phenomenon, the thin film transistor may fail to function. This disclosure offers a thin film transistor circuit having a first transistor connected to a low voltage, and a second transistor connected to the gate of the first transistor. When the gate voltage of the second transistor is changed from the high level to the low level, the gate voltage of the first transistor is brought to a voltage level lower than the low voltage.
申请公布号 US2015034950(A1) 申请公布日期 2015.02.05
申请号 US201414451461 申请日期 2014.08.05
申请人 Japan Display Inc. 发明人 MIYAZAWA Toshio;KURANAGA Takahide
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin film transistor circuit comprising: a first node from which a first output signal is output; a second node which receives a first low voltage; a third node which receives a first input signal; a first transistor connected interposingly between the first node and the second node, and a second transistor connected interposingly between the gate node of the first transistor and the second node; wherein the gate node of the second transistor is connected to the third node and, when the first input signal is changed from a high level to a low level, the gate node of the first transistor is driven lower than the first low voltage.
地址 Tokyo JP