发明名称 SILICON REFINING DEVICE
摘要 Provided is a silicon refining device that is used when industrially producing silicon of high purity by vacuum melting, has a high P removal rate and thus high productivity, and is a practical device cost-wise with a simple and cheap device configuration. This silicon refining device comprises, in a decompression vessel provided with a vacuum pump, a crucible that contains a metal silicon material, a heating device that heats the crucible, and a molten metal surface thermal insulation member that covers the upper portion of silicon molten metal and has an exhaust opening with an opening area that is smaller than the silicon molten metal surface area. The molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.
申请公布号 US2015033798(A1) 申请公布日期 2015.02.05
申请号 US201214381150 申请日期 2012.03.09
申请人 Kishida Yutaka;Dohnomae Hitoshi 发明人 Kishida Yutaka;Dohnomae Hitoshi
分类号 C01B33/037 主分类号 C01B33/037
代理机构 代理人
主权项 1. A silicon refining device comprising, in a decompression vessel provided with a vacuum pump: a crucible with an opening at the upper end that contains metal silicon material; a heating device that heats the crucible; and a molten metal surface thermal insulation member arranged on the upper portion of said crucible to cover the upper portion of silicon molten metal and having an exhaust opening with an opening area smaller than the silicon molten metal surface area, wherein the molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.
地址 Tokyo JP