发明名称 PROCESS KIT SHIELD AND PHYSICAL VAPOR DEPOSITION CHAMBER HAVING SAME
摘要 <p>Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.</p>
申请公布号 KR20150013594(A) 申请公布日期 2015.02.05
申请号 KR20147032961 申请日期 2013.04.18
申请人 发明人
分类号 C23C14/04;C23C14/06;C23C14/34 主分类号 C23C14/04
代理机构 代理人
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