| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing device and method that can prevent generation of an adhesion film to a stage disposed in a chamber of a plasma processing device with a simple construction.SOLUTION: A dry etching device 1 has a feeding carrier 5 comprising a holding sheet 6 for holding a wafer and an annular frame 7, and an upward and downward movable cover 33. The cover 33 is movable to a descending position at which the cover 33 covers the feeding carrier 5 mounted on a stage 14. At the descending position, a contact face 33f at the tip of a cover side projecting portion 33g provided to the outer peripheral portion of a main body 33a of the cover 33 comes into contact with a contact face 22b provided to an exterior part 22B of the stage 14. Heat of the cover 33 caused by exposure to plasma is radiated through this contact, and the temperature of the stage 14 increases.</p> |
