SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0≦X<1) are laminated periodically, the superlattice layer contacting the active layer and having an average refractive index of 2.6 or lower. The In composition of the InGaN layer is lower than that of the InGaN quantum well layer.

主权项

1. A semiconductor laser device for generating blue-violet light with an emission wavelength of 400 nm to 410 nm, comprising:
an n-type group III nitride semiconductor layer; an active layer laminated on the n-type group III nitride semiconductor layer and having an InGaN quantum well layer; a p-type group III nitride semiconductor layer laminated on the active layer; and a transparent electrode in contact with the p-type group III nitride semiconductor layer, the electrode serving as a clad, wherein the p-type group III nitride semiconductor layer includes a p-type contact layer in contact with the transparent electrode, the n-type group III nitride semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the n-type clad layer and the active layer, the n-type guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0≦X<1) are laminated periodically, the superlattice layer having an average refractive index of 2.6 or lower, the In composition of the InGaN layer is lower than the In composition of the InGaN quantum well layer, and the superlattice layer is in contact with the active layer.