| 摘要 |
A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate having a plurality of first doped regions and second doped regions; and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a first gate dielectric layer and a second gate dielectric layer; and forming a first metal gate and a second metal gate on the first gate dielectric layer and the second gate dielectric layer, respectively. Further, the method includes forming a third dielectric layer on the second metal gate; and forming a second dielectric layer on the first dielectric layer. Further, the method also includes forming at least one opening exposing at least one first metal gate and one first doped region; and forming a contact layer contacting with the first metal gate and the first doped region to be used as a share contact structure. |
