METHOD FOR SELECTIVELY TRANSFERRING SEMICONDUCTOR ELEMENT

摘要

A method for selectively separating a semiconductor element, comprising the following steps: a. providing a substrate (101) having a first surface (1011) and a second surface; b. providing a plurality of semiconductor epitaxial stack layers to be located on the first surface (1011), wherein any one of the plurality of semiconductor epitaxial stack layers contains a first semiconductor epitaxial stack layer (31) and a second semiconductor epitaxial stack layer (32); the second semiconductor epitaxial stack layer (32) is spaced apart from the first semiconductor epitaxial stack layer (31); and an adhesive force between the first semiconductor epitaxial stack layer (31) and the substrate (101) is different from an adhesive force between the second semiconductor epitaxial stack layer (32) and the substrate (101); and c. alternatively separating the first semiconductor epitaxial stack layer (31) or the second semiconductor epitaxial stack layer (32) from the substrate (101).