| 发明名称 |
Conductive Hard Carbon Film and Method for Forming the Same |
| 摘要 |
A film is formed under vacuum by a step of purifying and/or flattening the base material (13) by irradiating the base material (13) with a gas cluster ion beam (4a); by a step of forming an intermediate layer film by evaporating/vaporizing an intermediate layer film forming material, allowing the evaporated/vaporized material to adhere to the surface of the base material (13), and irradiating the intermediate layer film forming material with a gas cluster ion beam (4a); and by evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated/vaporized material to adhere to the surface of the intermediate layer film, and irradiating the carbon film forming material with a gas cluster ion beam (4a). |
| 申请公布号 |
US2015037568(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201113885623 |
申请日期 |
2011.11.28 |
| 申请人 |
Kitagawa Teruyuki;Nomura Shuhei |
发明人 |
Kitagawa Teruyuki;Nomura Shuhei |
| 分类号 |
H01B1/04;C23C14/34;G01R1/067 |
主分类号 |
H01B1/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for vapor-phase formation of a conductive hard carbon film on a base material under vacuum, the method comprising a step of purifying and/or flattening the base material by irradiating the base material with a gas cluster ion beam; and a step of evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated/vaporized material, which is optionally ionized, to adhere to the surface of the base material, and irradiating the carbon film forming material with a gas cluster ion beam for film formation. |
| 地址 |
Himeji JP |
