发明名称 Device And Method For Continuous Chemical Vapour Deposition Under Atmospheric Pressure And Use Thereof
摘要 A device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.
申请公布号 US2015037500(A1) 申请公布日期 2015.02.05
申请号 US201414488750 申请日期 2014.09.17
申请人 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. 发明人 Reber Stefan;Hurrle Albert;Schillinger Norbert
分类号 C23C16/44;C23C16/54;C23C16/455;C23C16/453 主分类号 C23C16/44
代理机构 代理人
主权项 1. A method for continuous chemical vapour deposition under atmospheric pressure on substrates, comprising: providing a device containing a reaction chamber, the reaction chamber having: front and rear side walls facing one another in an opposing spaced-apart configuration along a longitudinal axis, first and second side walls coupled to the front and rear walls and facing one another in an opposing spaced-apart configuration along a first lateral axis, the first lateral axis being transverse to the longitudinal axis, such that the front, rear, first and second side walls define an interior volume of the reaction chamber, first and second openings into the interior volume of the reaction chamber and being oriented in an opposing spaced-apart configuration along a second lateral axis, the second lateral axis being transverse to both the first lateral axis and the longitudinal axis, and at least two pair of gas inlets/outlets, including: (i) a first gas inlet disposed through the first side wall, and a first gas outlet disposed through the second side wall, and (ii) a second gas inlet disposed through the second side wall, and a second gas outlet disposed through the first side wall; transporting at least first and second substrates to be treated past the reaction chamber in a transport direction parallel to the longitudinal axis, such that the respective substrates temporarily close off the first and second openings, respectively, thereby defining a closed internal volume of the reaction chamber and receiving deposition gas via the at least two pair of gas inlets/outlets; and controlling a gas supply such that, during the deposition on the substrates, parasitic depositions in the device are prevented and/or removed at the same time.
地址 Munchen DE