发明名称 SEMICONDUCTOR DEVICE HAVING VOLTAGE GENERATION CIRCUIT
摘要 The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.
申请公布号 US2015035588(A1) 申请公布日期 2015.02.05
申请号 US201414518246 申请日期 2014.10.20
申请人 Renesas Electronics Corporation 发明人 SANO Shinya;TAKAHASHI Yasuhiko;HORIGUCHI Masashi
分类号 G05F1/46 主分类号 G05F1/46
代理机构 代理人
主权项
地址 Kawasaki-shi JP