发明名称 |
DEVICE AND METHOD FOR A LDMOS DESIGN FOR A FINFET INTEGRATED CIRCUIT |
摘要 |
Semiconductor devices and methods for manufacturing an LDMOS FinFET integrated circuit. The intermediate semiconductor device includes a substrate, a first well in the substrate, a second well in the substrate, and at least two polysilicon gates. The first well overlaps the second well and the at least one first gate is disposed over the first well and at least one second gate is disposed over the second well. The method includes forming a channel region and a drift region in the substrate, wherein the channel region overlaps the drift region, forming a shallow trench isolation region in the drift region, forming at least one first gate over the channel region, forming at least one second gate over the shallow trench isolation region, and applying at least one metal layer over the at least one first gate and the at least one second gate. |
申请公布号 |
US2015035053(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201313958938 |
申请日期 |
2013.08.05 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
SINGH Jagar |
分类号 |
H01L29/78;H01L29/66;H01L29/49;H01L27/088 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. An intermediate semiconductor device, comprising:
a substrate; a first well in the substrate; a second well in the substrate, wherein the first well overlaps the second well; and at least two polysilicon gates, wherein at least one first gate is disposed over the first well and at least one second gate is disposed over the second well. |
地址 |
Grand Cayman KY |