NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.

主权项

1. A nonvolatile memory device comprising:
a stack structure including a plurality of gate electrodes and a plurality of insulating patterns alternately and vertically stacked on a substrate; a channel structure penetrating the stack structure; and a charge storage layer formed between the channel structure and the stack structure, wherein each of the gate electrodes includes a metal pattern and a metal liner pattern between the metal pattern and the channel structure.