PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE STRUCTURE HAVING THE SAME

摘要

A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a projection width W1. An interval width W2 is formed between every two adjacent protruding portions. A vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate. The value of {[(W1)/2+W2]/h} is substantially equal to tan 46°. The N-type semiconductor layer is located on the substrate and covers the protruding portions. The light emitting layer is located on the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer.

主权项

1. A patterned substrate, comprising a plurality of protruding portions formed on a surface of the substrate, wherein a horizontal projection of each of the protruding portions on the surface has a projection width W1, an interval width W2 is formed between every two adjacent protruding portions, and a vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate, wherein the value of {[(W1)/2+W2]/h} is substantially in a range from tan 44° to tan 48°.