INSULATED-GATE BIPOLAR TRANSISTOR MANUFACTURING METHOD

摘要

An insulated-gate bipolar transistor (IGBT) manufacturing method comprises: providing a first-conduction-type semiconductor substrate (101), the semiconductor substrate (101) having a first main surface and a second main surface; performing source area (100) photoetching and first-conduction-type ion implantation on the first-conduction-type semiconductor substrate (101); forming second-conduction-type base regions (301, 302) on the first main surface, having the source area (100), of the first-conduction-type semiconductor substrate (101) and forming a second-conduction-type protection terminal (200) on an external side of the first main surface having the source area (100); forming a residual first main surface structure of an IGBT on the first main surface of the semiconductor substrate (101) based on the formed base regions (301, 302); and forming a second main surface structure of the IGBT on the second main surface side of the semiconductor substrate (101). The IGBT manufacturing method reduces the number of used photolithography masks, and has a simple process, low manufacturing costs, and high application reliability.