| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device and method that directly expose a base material to a high-temperature portion of thermal plasma and can estimate heating performance of a processing target object.SOLUTION: A chromium film 2 is formed on a temperature measuring plate 1. In an inductive coupling type plasma torch unit T, a coil 3 formed of a conductor is disposed in the neighborhood of a first ceramics block 4 and a second ceramics block 5. Gas supplied from a plasma gas supply pipe 10 to a plasma gas manifold 9 is introduced into an elongated chamber 7 through a plasma gas supply hole 11 (through-hole). Light radiated from the interface between the chromium film 2 and the temperature measuring plate 1 is collected by a lens 12, and guided to a radiation thermometer 13 through an optical fiber, whereby the temperature of the temperature measuring plate 1 can be measured. |
