发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of accurately executing a write operation on a memory cell.SOLUTION: A nonvolatile semiconductor storage device according to an embodiment includes: a memory cell array; a plurality of word lines each connected to control gate electrodes of a plurality of memory cells; a plurality of bit lines; a source line; and a control circuit executing a write operation for applying a predetermined write voltage from a selected word line to a selected memory cell in a selected memory string for data writing. The control circuit is configured to execute a first charging operation and a second charging operation at different timing at a time of charging unselected memory strings prior to the write operation, the first charging operation being performed such that the bit lines connected to the unselected memory strings charge the unselected memory strings, and the second charging operation being performed such that the source line connected to the unselected memory strings charges the unselected memory strings.
申请公布号 JP2015026406(A) 申请公布日期 2015.02.05
申请号 JP20130153834 申请日期 2013.07.24
申请人 TOSHIBA CORP 发明人 YAMAMOTO MAYUMI;UENO HIROTAKA;SHIBAZAKI KEN
分类号 G11C16/02;G11C16/04;G11C16/06 主分类号 G11C16/02
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