| 摘要 |
The invention relates to a method of control implemented in a variable speed drive, said method comprising the following steps of:
for a switching of a transistor (100) of the rectifier stage (1), determination of a first control signal (Ce) corresponding to a first gate current (Ige) to be applied to the gate of the transistor to be switched so as to act on the rate of the variation of a first voltage (Vrec) generated by the switching,for a switching of a transistor (200) of the inverter stage (2), determination of a second control signal (Cs) corresponding to a second gate current to be applied to the gate of the transistor to be switched so as to act on the rate of the variation of a second voltage (Vine) generated by the switching,determination of a first instant of switching (te) of the transistor of the rectifier stage and of a second instant of switching (ts) of the transistor of the inverter stage (2),the first control signal (Ce), the second control signal (Cs), the first instant of switching and the second instant of switching being determined so as to minimize the difference between the first voltage (Vrec) and the second voltage (Vinv). |
| 主权项 |
1. Method of control implemented in a variable speed drive which comprises:
a rectifier stage (1) connected to several input phases (R, S, T) receiving an input current (le) and an inverter stage (2) connected to several output phases (U, V, W) on which there flows an output current (Is) destined for an electrical load (C), a DC power supply bus linking the rectifier stage (1) to the inverter stage (2) and comprising a first power supply line (V+) and a second power supply line (V−), the rectifier stage (1) and the inverter stage (2) each comprising at least two switching arms (10a, 10b, 10c, 20a, 20b, 20c) connected to the first power supply line and to the second power supply line, each switching arm comprising at least two transistors,characterized in that the method of control comprises the following steps of:
for a switching of a transistor (100) of the rectifier stage (1), determination of a first control signal (Ce) corresponding to a first gate current (Ige) to be applied to the gate of the transistor to be switched so as to act on the rate of the variation of a first voltage (Vrec) generated by the switching, for a switching of a transistor (200) of the inverter stage (2), determination of a second control signal (Cs) corresponding to a second gate current to be applied to the gate of the transistor to be switched so as to act on the rate of the variation of a second voltage (Vinv) generated by the switching, determination of a first instant of switching (te) of the transistor of the rectifier stage and of a second instant of switching (ts) of the transistor of the inverter stage (2), the first control signal (Ce), the second control signal (Cs), the first instant of switching and the second instant of switching being determined so as to minimize the difference between the first voltage (Vrec) and the second voltage (Vine). |
