| 发明名称 |
Capping Layer Interface Interruption for Stress Migration Mitigation |
| 摘要 |
A semiconductor device includes a substrate, a dielectric layer supported by the substrate, an interconnect adjacent the dielectric layer, the interconnect including a conduction material and a barrier material disposed along sidewalls of the interconnect between the conduction material and the dielectric layer, and a layer disposed over the interconnect to establish an interface between the conduction material, the barrier material, and the layer. A plate is disposed along a section of the interconnect to interrupt the interface. |
| 申请公布号 |
US2015035151(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201313956068 |
申请日期 |
2013.07.31 |
| 申请人 |
Shroff Mehul D.;Reber Douglas M.;Travis Edward O. |
发明人 |
Shroff Mehul D.;Reber Douglas M.;Travis Edward O. |
| 分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a dielectric layer supported by the substrate; an interconnect adjacent the dielectric layer, the interconnect comprising a conduction material and a barrier material disposed along sidewalls of the interconnect between the conduction material and the dielectric layer; a layer disposed over the interconnect that establishes an interface between the conduction material, the barrier material, and the layer; and a plate disposed along a section of the interconnect to interrupt the interface. |
| 地址 |
Austin TX US |
