LOGIC FINFET HIGH-K/CONDUCTIVE GATE EMBEDDED MULTIPLE TIME PROGRAMMABLE FLASH MEMORY

摘要

A method for fabricating a multiple time programmable (MTP) device includes forming fins of a first conducting type on a substrate of a second conducting type. The method further includes forming a floating gate dielectric to partially surround the fins. The method also includes forming a floating gate on the floating gate dielectric. The method also includes forming a coupling film on the floating gate and forming a coupling gate on the coupling film.

主权项

1. A method of fabricating a multiple time programmable (MTP) device, comprising:
forming a plurality of fins of a first conducting type on a substrate of a second conducting type; forming a floating gate dielectric to partially surround the plurality of fins; forming a floating gate on the floating gate dielectric; forming a coupling film on the floating gate; and forming a coupling gate on the coupling film.