SEMICONDUCTOR ASSEMBLY AND METHOD OF MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a GaN monolithically integrated semiconductor assembly provided with a protection circuit, and a method of manufacturing the same.SOLUTION: A semiconductor assembly 100 includes a substrate 110 including silicon (Si), and a gallium nitride (GaN) semiconductor device 120 is fabricated on the substrate. The semiconductor assembly 100 further includes at least one transient voltage suppressor (TVS) structure 130 fabricated in or on the substrate 110, where the TVS structure 130 is in electrical contact with the GaN semiconductor device 120. The TVS structure 130 is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device 120 is greater than a threshold voltage.