| 发明名称 |
INDUCTIVE DEVICE THAT INCLUDES CONDUCTIVE VIA AND METAL LAYER |
| 摘要 |
An inductive device that includes a conductive via and a metal layer are disclosed. A particular method of forming an electronic device includes forming a metal layer that contacts a surface of a substrate. The substrate, including the surface, is formed from a substantially uniform dielectric material. The metal layer contacts a conductive via that extends at least partially within the substrate. The metal layer and the conductive via form at least a portion of an inductive device. |
| 申请公布号 |
US2015035162(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201313957462 |
申请日期 |
2013.08.02 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Lan Je-Hsiung;Zuo Chengjie;Velez Mario Francisco;Kim Daeik D.;Berdy David F.;Yun Changhan;Mikulka Robert P.;Kim Jonghae;Nowak Matthew M. |
| 分类号 |
H01L23/522;G06F17/50;H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an electronic device comprising:
forming a first metal layer that directly contacts a first surface of a substrate, wherein the substrate, including the first surface, is formed from a substantially uniform dielectric material, wherein the first metal layer contacts a-first conductive via that extends at least partially within the substrate, and wherein the first metal layer and the first conductive via form at least a portion of an inductive device. |
| 地址 |
San Diego CA US |
