发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.
申请公布号 US2015035125(A1) 申请公布日期 2015.02.05
申请号 US201414518580 申请日期 2014.10.20
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 Yoshizawa Kazutaka;Ema Taiji;Moriki Takuya
分类号 H01L21/66;H01L23/522;H01L23/532;H01L23/544;H01L23/00 主分类号 H01L21/66
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate that includes a chip region, a scribe region that surrounds said chip region, and a pad region located in said scribe region and located in the vicinity of an edge of said semiconductor substrate in plan view; a first conductive pattern formed on said substrate and located in said pad region and separated from said edge in plan view; a second conductive pattern, that is electrically connected to said first conductive pattern and located in the vicinity of said edge, formed on said first conductive layer in said pad region.
地址 Yokohama-shi JP