PROCESS FOR IMPROVING CRITICAL DIMENSION UNIFORMITY OF INTEGRATED CIRCUIT ARRAYS

摘要

Methods for patterning integrated circuit (IC) device arrays employing an additional mask process for improving center-to-edge CD uniformity are disclosed. In one embodiment, a repeating pattern of features is formed in a masking layer over a first region of a substrate. Then, a blocking mask is applied over the features in the masking layer. The blocking mask is configured to differentiate array regions of the first region from peripheral regions of the first region. Subsequently, the pattern of features in the array regions is transferred into the substrate. In the embodiment, an etchant can be uniformly introduced to the masking layer because there is no distinction of center/edge in the masking layer. Thus, CD uniformity can be achieved in arrays which are later defined.

主权项

1. An intermediate integrated circuit structure, comprising:
a substrate comprising a plurality of array regions and peripheral regions surrounding and between the array regions; and a repeating pattern of features formed over the substrate and spanning across two or more array regions and one or more peripheral regions.