| 发明名称 |
GALLIUM NITRIDE-BASED DIODE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A GaN-based diode may include an intrinsic GaN-based semiconductor layer, GaN-based semiconductor layers configured to have a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer. A first electrode made of metal is placed on a surface opposite a surface bonded to the GaN-based semiconductor layers of the intrinsic GaN-based semiconductor layer; a second electrode is placed on a surface opposite to a surface bonded to the intrinsic GaN-based semiconductor layer of the GaN-based semiconductor layers of the first conductivity type. Voltage-resistant layers configured to have a second conductivity type are formed in regions of the intrinsic GaN-based semiconductor layer that come in contact with edges of the first electrode. |
| 申请公布号 |
US2015034964(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414447225 |
申请日期 |
2014.07.30 |
| 申请人 |
Seoul Semiconductor Co., Ltd. |
发明人 |
TAKEYA Motonobu;LEE Kang Nyung |
| 分类号 |
H01L29/872;H01L29/47;H01L29/66;H01L29/20;H01L21/02 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gallium nitride (GaN)-based diode, comprising:
an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers with a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer; a first electrode made of metal and positioned on a surface opposite a surface bonded to the GaN-based semiconductor layers of the intrinsic GaN-based semiconductor layer; a second electrode positioned on a surface opposite to a surface bonded to the intrinsic GaN-based semiconductor layer of the GaN-based semiconductor layers of the first conductivity type; and voltage-resistant layers with a second conductivity type and formed in regions of the intrinsic GaN-based semiconductor layer that come in contact with edges of the first electrode. |
| 地址 |
Ansan-si KR |
