SYSTEM AND METHOD FOR FORMING PATTERNED COPPER LINES THROUGH ELECTROLESS COPPER PLATING

摘要

A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.

主权项

1. A method for forming copper on a substrate comprising:
forming a tantalum layer on the substrate; forming a ruthenium seed layer on the tantalum layer; forming a photoresist layer on the ruthenium seed layer; removing an undesired portion of the photoresist layer leaving only desired portion of the photo resist layer, wherein removing the undesired portions of the photoresist layer exposes a first portion of the ruthenium seed layer; producing a plating solution including copper ions suspended in a substantially neutral or acidic solution that does not react with the desired portion of the photo resist layer, wherein the desired portion of the photo resist layer does not include a protective layer; applying the plating solution to the first portion of the ruthenium seed layer; reducing a copper oxide in the plating solution to elemental copper using a cobalt ion solution instead of an aldehyde; forming copper on the first portion of the ruthenium seed layer at a rate greater than about 500 Angstrom per minute up to about 2500 Angstrom per minute; removing the desired portion of the photo resist layer to expose a second portion of the ruthenium seed layer; removing the second portion of the ruthenium seed layer in a plasma etch process to expose a first portion of the tantalum layer; and removing the first portion of the tantalum layer in the plasma etch process.