SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

摘要

This substrate processing method comprises: a step wherein a substrate, which is provided with a prebaked film that has a silazane bond, is carried into a process chamber; a modification step wherein the substrate is heated to a first temperature and a processing gas is supplied to the substrate; and a drying step wherein the substrate is heated at a second temperature that is higher than the first temperature but not higher than the temperature of the prebaking.