WIDE-BANDGAP SEMICONDUCTOR ELEMENT

摘要

This wide-bandgap semiconductor element is provided with a semiconductor substrate (epitaxial substrate) (20) that has a principal surface (top surface) (P2) and comprises a wide-bandgap semiconductor. Said semiconductor substrate (20) has a device region (20E) and a surrounding region (20T) surrounding said device region (20E). In the surrounding region (20T), the semiconductor substrate (20) has a first semiconductor region (drift layer) (21) that has a first conductivity type and a second semiconductor region (field-limiting region) (25) that is formed on top of the first semiconductor region (drift layer) (21), has a principal surface (P2), and has a second conductivity type that is different from the first conductivity type. The principal surface (P2) of the second semiconductor region (field-limiting region) (25) has a plurality of grooves (70) that form rings around the device region (20E). This makes it possible to provide a wide-bandgap semiconductor element that exhibits an increased breakdown voltage without an increase in size.