CMOS FABRICATION OF PIEZOELECTRIC DEVICES

摘要

An integrated circuit structure and methods of forming an integrated circuit structure are disclosed. The integrated circuit structure includes an aluminum nitride (AIN) layer and a silicon layer that covers a portion of the AIN layer. At least one complementary metal oxide semiconductor (CMOS) device is formed in the silicon layer and at least one piezoelectric device formed in the AIN layer. The at least one piezoelectric device can be for example an acoustic device, such as thin-film bulk acoustic resonator (FBAR) or a surface acoustic wave (SAW) device.