SILICON CONTROLLED RECTIFIER FOR HIGH VOLTAGE APPLICATIONS

摘要

In a silicon-controlled rectifier, an anode region includes p-type anode well regions which are laterally surrounded by an n-type well region. A length of a p-type anode well region, as measured in a first direction, is greater than a width of the p-type anode well region, as measured in a second direction perpendicular to the first direction. A p-type well region meets the n-type well region at a junction, wherein the junction extends between the p-type well region and n-type well region in the second direction. A cathode region includes a plurality of n-type cathode well regions which are formed in the p-type well region. A length of an n-type cathode well region, as measured in the first direction, is greater than a width of the n-type cathode well region, as measured in the second direction.

主权项

1. A silicon-controlled rectifier (SCR), comprising:
an anode region comprising a plurality of linear or t-shaped p-type anode wells extending in parallel with one another in a first direction and spaced apart from one another in a second direction, wherein a p-type anode well has a length in the first direction and a width in the second direction; wherein the length of the p-type anode well is greater than the width of the p-type anode well; an n-type well laterally surrounding the plurality of p-type anode wells; a p-type well region that meets the n-type well region at a junction, wherein the junction extends between the p-type and n-type well regions in the second direction; a cathode region comprising a plurality of n-type cathode wells, wherein an n-type cathode well has a length in the first direction and a width in the second direction; wherein the length of the n-type cathode well is greater than the width of the n-type cathode well.