| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can satisfy both of reduction in parasitic capacitance between word lines and reduction in electrical resistance.SOLUTION: A semiconductor device comprises: a plurality of element isolation regions which extend on a semiconductor substrate in a first direction and which are repeatedly arranged in a second direction orthogonal to the first direction; at least one active region which is partitioned in the second direction by the plurality of element isolation regions and extend in the first direction; a first insulation film which covers a whole area of the active region and the element isolation regions; a first hole which pierces the first insulation film to reach a top face of the active region and has a first width in the first direction; a lateral face pillar which covers a lateral face of the first hole; a second hole composed of an internal surface of the lateral face pillar; and word lines each composed of a first conductor part which fills the second hole and a second conductor part which is connected to a top face of the first conductor part and extends in the second direction. Each first conductor part composes a gate electrode of a vertical transistor and each second conductor part is formed to have a width in the first direction within the first width.</p> |
