| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING |
| 摘要 |
A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer. |
| 申请公布号 |
US2015036970(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201313956769 |
申请日期 |
2013.08.01 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LAI Jui Hsieh;KUO Ying-Hao;YEE Kuo-Chung |
| 分类号 |
G02B6/12;G02B6/13 |
主分类号 |
G02B6/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first chip; a dielectric layer over the first chip; a conductive layer embedded in the dielectric layer, the conductive layer electrically coupled to the first chip; and a second chip over the dielectric layer, the second chip electrically coupled to the conductive layer, the second chip comprising an optical component, wherein the first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer. |
| 地址 |
Hsinchu TW |
