| 摘要 |
This organic transistor uses a compound that, when used in an active semiconductor layer of an organic transistor, exhibits high carrier mobility, little threshold-voltage variation after being driven repeatedly, and a high degree of solubility in an organic solvent. Said organic transistor contains, in an active semiconductor layer, a compound that can be represented by general formula (1) (in which X1 and X2 each independently represent either a sulfur atom or a selenium atom; each R1 and R2 independently represents either a hydrogen atom or a substituent; at least one of the n R1s and n R2s represents a group that can be represented by general formula (W); R3 through R10 each independently represent either a hydrogen atom or a substituent; n represents an integer from 1 to 6; L represents a specific divalent linking group; and R represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted silyl group, an oligoethyleneoxy group in which the number (v) of ethyleneoxy units is 2 or more, or an oligosiloxane group in which the number of silicon atoms is 2 or more). (1) |
