| 摘要 |
The purpose of the present invention is to reduce variability in threshold voltages at operating times of a device. A semiconductor device for radiation detection, wherein: an insulating layer disposed so as to face a channel region (41) of an MOS transistor has a stack structure comprising a silicon nitride film (83) and a silicon oxide film (83); and an inverse signal input unit which inputs, into the channel region (41), a signal in which an input signal to a source region (43) of the MOS transistor has been inverted. The inverse signal input unit has: a gate electrode (82), which has been formed adjacent to a gate electrode (81) of the MOS transistor, upon an extension of the channel region (41) of the gate electrode (81); and a CMOS circuit (80), which inverts an input signal that is input to the source region (43) of the MOS transistor in accordance with input values of the input signal. The signal that has been inverted at the CMOS circuit (80) is input to the first-mentioned gate electrode (82). |
