| 摘要 |
Provided herein are embodiments relating to metal-insulator-metal diodes and their method of manufacture. In some embodiments, the metal-insulator-metal diodes can be made, in part, via the use of an evanescent wave on a photo resist. In some embodiments, this allows for finer manipulation of the photo resist and allows for the separation of one piece of metal into a first and second piece of metal. The first piece of metal can then be differentially treated from the second (for example, by annealing another metal to the first piece), to allow for a difference in the work function of the two pieces of metal. |
