| 摘要 |
Provided is a semiconductor device capable of preventing the remarkable deterioration of electrical properties according to refinement. The semiconductor device comprises: a first oxide semiconductor layer on an insulating surface, a second oxide semiconductor layer on the first oxide semiconductor layer, a source electrode and a drain electrode which touch the side of the first oxide semiconductor layer and the second oxide semiconductor layer, a first insulating layer and a second insulating layer on the source electrode and the drain electrode, and a third oxide semiconductor layer on the second oxide semiconductor layer, the source electrode and the drain electrode, a gate insulating layer on the third oxide semiconductor layer, and a gate electrode which touches the upper part of the gate insulating layer and faces the upper side and the lateral side of the second oxide semiconductor layer. |
