| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with improved withstand voltage characteristics and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: In a semiconductor device, in order for holes reaching from an anode layer (a P-type emitter region, a P-type semiconductor region P2) not to increase at ends of a depletion layer DL formed when a large voltage with respect to a cathode terminal Tk is applied to an anode terminal Ta, P-type semiconductor regions P2b, which are ends of the anode layer, are formed by impurity regions in low concentration with respect to a P-type semiconductor region P2a, which is the center of the anode layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
