| 摘要 |
The present invention relates to a dry etching method for a magnetic tunnel junction (MTJ) structure formed of various magnetic substances, metal substances, and an oxide film and, more specifically, to a dry etching method for an MTJ structure, including a step of etching the MTJ structure by ion and radical in plasma by using H_2O gas or H_2O_2 gas as etching gas and making plasma from the etching gas. According to the present invention, the dry etching method for an MTJ structure includes: a step (S100) of preparing one as etching gas among H_2O gas including hydrogen, oxygen, and OH (hydroxy) radical, mixture gas of H_2O gas and Ar gas, mixture gas of H_2O gas and CH_4 gas, H_2O_2 gas, mixture gas of H_2O_2 gas and Ar gas, and mixture gas of H_2O_2 gas and CH_4 gas; and a step (S200) of making plasma from the etching gas and then etching the MTJ structure by ion and radical in the plasma. |
