| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which prevents fine foreign matters reflected by an inner wall of a vacuum vessel and a turbo molecular pump blade, etc on a flow of processing gas from being reached to a wafer on a sample holder again in order to prevent degradation of productivity of a semiconductor device caused by fine foreign matters generated in a plasma processing chamber. <P>SOLUTION: An etching processing apparatus comprises a plasma generating device; a vacuum chamber 100 which can be depressurized; a gas supply apparatus for supplying gas into the vacuum chamber 100; a sample holder 113 for holding a wafer 128 to be plasma-processed; an apparatus for applying high frequency to the wafer 128 held on the sample holder 113; and a vacuum exhaust apparatus. The apparatus is provided with foreign matter blocking plates 201 for preventing fine foreign matters 203 generated in the apparatus from being bounced by a vacuum exhaust system and a vacuum chamber wall such as the turbo molecular pump positioned at a downstream side from the wafer 128 to be plasma-processed and from reaching to the surface of the wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
