发明名称 PROCEDE DE FABRICATION DE CIRCUITS
摘要 A substrate for a micro-electronic circuit is pierced at select locations thereof, as by a laser beam or an ultrasonic drill and then mounted for rotation about a pair of axes defining an angle therebetween within a vacuum metal vaporization apparatus. A metal, such as gold, is vaporized within the apparatus and is uniformly deposited on the through-hole walls. Galvanic reinforcement of the metal coating on the through-hole walls takes place simultaneously with deposition of select circuit paths.
申请公布号 BE789174(A1) 申请公布日期 1973.01.15
申请号 BE19720789174 申请日期 1972.09.22
申请人 SIEMENS A.G., A BERLIN ET A MUNICH, (ALLEMAGNE), 发明人
分类号 H05K3/14;H05K3/40;(IPC1-7):05K/ 主分类号 H05K3/14
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