发明名称 |
PROCEDE DE FABRICATION DE CIRCUITS |
摘要 |
A substrate for a micro-electronic circuit is pierced at select locations thereof, as by a laser beam or an ultrasonic drill and then mounted for rotation about a pair of axes defining an angle therebetween within a vacuum metal vaporization apparatus. A metal, such as gold, is vaporized within the apparatus and is uniformly deposited on the through-hole walls. Galvanic reinforcement of the metal coating on the through-hole walls takes place simultaneously with deposition of select circuit paths. |
申请公布号 |
BE789174(A1) |
申请公布日期 |
1973.01.15 |
申请号 |
BE19720789174 |
申请日期 |
1972.09.22 |
申请人 |
SIEMENS A.G., A BERLIN ET A MUNICH, (ALLEMAGNE), |
发明人 |
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分类号 |
H05K3/14;H05K3/40;(IPC1-7):05K/ |
主分类号 |
H05K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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